Heterostructure Si1-x-yGexCy-channel p-MOSFETs compatible with CMOS processing
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چکیده
We report the fabrication of heterostructure p-MOSFETs with low-carbon Si1-xyGexCy channels. The use of low carbon fraction (y = 0.002) does not significantly affect the strain of the channel layer or the valence band offset. Small carbon fractions do improve the thermal stability of the channel region and make it possible to use conventional thermal oxidation and ion implant annealing without layer relaxation. A peak hole mobility of 200 cm/Vsec was measured in a device with a 30 nm channel and a germanium fraction ramped from 10% to 40%.
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تاریخ انتشار 1999